Darlington

美 [ˈdɑrlɪŋtən]

n.  达令敦(英格兰北部一城市)

计算机

BNC.1696



双语例句

  1. In Darlington, queues formed at some polling booths.
    在达灵顿,有些投票站前排起了队。
  2. The year has seen one signal triumph for the labour party-victory in the Darlington by-election.
    工党在这一年取得了巨大的成功一在达灵顿的补选中获胜。
  3. Reflectional visible light sensor that can magnify the intensity of reflectional light by Darlington transistor is adopted in the sensor module.
    传感器模块采用的是反射式可见光传感器,利用达林顿管对反射光强进行放大。
  4. Richardson, who is expected to feature in sunderland's friendly against Darlington on wednesday, described the move as "exciting".
    理查德森可能出战周三和达灵顿的友谊赛,他说这次转会是“令人激动的”。
  5. They made us take ballet at darlington.
    他们让我们在达宁顿学芭蕾。
  6. Graham: And a sentimentalist, my dear Darlington, is a man who sees an absurd value in everything and doesn't know the market price of any single thing.
    格瑞安:而伤感派呢,我的好达林顿,什么东西都看得出荒谬的价值,可是没一样东西知道市价。
  7. His retail business in Darlington expanded rapidly between the wars.
    在两次战争期间,他在达灵顿的零售业务发展迅速。
  8. "We're here because this is where the real UAV capability is," the flight sergeant from Darlington, England, said.
    “我们来这里学习,是因为这里才是真正具备使用无人飞机能力的地方,”来自英国Darlington的飞行员上士说。
  9. Fast High Voltage High Current Darlington Device
    高速高压大电流达林顿管
  10. An Optimum Design for High Input Impendence Darlington Transistor
    高输入阻抗达林顿晶体管的优化设计
  11. Overload protection of Darlington transistor in Main Circuit of Inverter Welding Power Source
    焊接逆变电源主电路中达林顿晶体管的过载保护
  12. The Design and Fabrication of High Gain and Power of Darlington Transistor
    高增益大功率达林顿晶体管的设计与制造
  13. The unbiased Darlington transistor was utilized to avoid crossover distortion and to improve power output for homing transmitting system.
    为了解决自导发射系统的交越失真及输出功率问题,采用无偏置型达林顿管替代;
  14. The Folding/ Unfolding method proposed by Burstall/ Darlington is a simple and powerful transformation method. Its major drawback is that only partial correctness of functions are preserved but termination may be lost.
    Burstall/Darlington提出的展开/叠卷方法是程序转换中简单而有效的一种方法,但该方法仅保持函数的部分正确性,而可能失去某些值上的终止性。
  15. This paper introduces an optimum design method for Darlington power transistor structure consisting of VDMOS and bipolar transistor and technological parameters. Also, the design model is established.
    提出了VDMOS和双极晶体管复合而成的达林顿功率晶体管结构和工艺参数的优化设计方法,建立了设计模型。
  16. A Low Noise Darlington SiGe Microwave Monolithic Integrated Circuit
    一种低噪声SiGe微波单片放大电路
  17. Light Amplified Characteristic of the Darlington Silicon Photo transistor
    达林顿硅光电晶体管的光放大特性
  18. The fabricating technology and design of a 20 A PNP darlington power transistor is introduced, and the tested results of the device is showed in this paper, too.
    介绍了20A硅PNP达林顿晶体管的设计思路、芯片的内部结构、工艺流程和工艺参数,同时列出了制造的产品的电性能测试结果。
  19. A low noise microwave monolithic integrated circuit ( MMIC) using Darlington configuration SiGe hetero-junction bipolar transistors ( HBT's) is presented.
    介绍了一种利用SiGe技术制作的低噪声SiGe微波单片放大电路(MMIC)。
  20. This paper introduces the design method and critical technology of two-staged power Darlington device whose hfe is no less than 12000, and make a detailed discussion on how to realize lower saturated voltage drop at a current ratio of 10A/ 1mA.
    介绍了hfe≥12000的两级功率达林顿器件的设计方法及关键技术。并对在10A比1mA的条件下实现低饱和压降的几项措施作了较详细的讨论。
  21. On Design of Darlington Switching Circuit for Automobile Electronic Ignition
    汽车点火集成开关电路中电流分配的最佳设计
  22. Darlington transistor is more convenience in power amplification areas because of its high power gain and high reliability.
    达林顿晶体管增益大、可靠性高,尤其在大功率应用中更加简便。
  23. Method on Enhancing Temperature Stability of Frequency Power Darlington Transistor
    提高功率达林顿晶体管温度稳定性的措施
  24. On Glass Passivation by Electrophoresis in Darlington Production
    复合晶体管的电泳法玻璃钝化研究
  25. The basic structure of the circuit is two stage cascade, in which were a CE ( common emitter) structure as input and a Darlington structure as output.
    电路的基本结构采用两级放大结构,以共发射极结构作为输入级,以达林顿结构作为输出级。
  26. A Silicon PNP Darlington Power Transistor
    硅PNP型大功率达林顿晶体管
  27. A light-activated Darlington heterojunction transistor based on a SiCGe/ 3C-SiC hetero-structure is proposed for anti-EMI ( electromagnetic interference) applications.
    针对抗电磁干扰的需要提出了一种由SiCGe/3C-SiC异质结构成的光控达林顿晶体管设计。
  28. Parallel connected Darlington transistor and power resistor are used as basic structure for analog load. The Hall current sensor is used to detect strong current.
    模拟负载采用了并联达林顿管与功率电阻连接的模拟电子负载结构形式,对大电流的检测使用了霍尔电流传感器。
  29. The system adopts double way and sampling feedback way of working to correct the output voltage; with integrated op-amp and Darlington tube composition power amplification circuit; using a keyboard control and synchronous serial port LED display.
    系统采用双路D/A差分,A/D采样反馈的工作方式,对输出电压进行校正;用集成运放及达林顿管组成功率放大电路;利用键盘控制;及同步串行口的LED显示。
  30. Between the multi-powers the author designes an ESD discharge channel by the diode string. Here the author also describes how to depress the Darlington amplification effect of diode string, and ultimately improves the whole-chip ESD protection framework.
    为多电源之间设计了由二极管串构成的ESD泄流通道,介绍了抑制二极管串的达林顿放大效应的方法,并最终完善了全芯片ESD防护构架。