STO
英
美
斯莱特型轨道
双语例句
- The queue manager maintains a certificate store ( key repository), which is stored as a file ( extension. sto) under the queue manager directory structure.
队列管理器维护一个证书库（密钥资源库），证书库被作为文件（扩展名.sto）存储在队列管理器目录结构下。 - Now, we hope that you will begin to understand that there is hope, but that we and all other STO beings can only act through you ( pause) in the collective sense.
现在，我们希望你开始明白存在着希望，但是我们和其他所有STO生物只能通过你们活动（停顿），通过集体的意识。 - Such effects are obviously advanced well beyond any signal type which can be sto ed by a foil beanie.
这样的影响明显是远远领先于任自动跳出广告何能被屏蔽帽阻止的信号形式。 - You need to hae quick reaction sto play these computer games.
玩这些计算机游戏你需要有很快的反应能力。 - Soon after this Morgiana came out upon some errands, and when she returned, she saw the mark the robber had made, and sto.
不久之后马姬娜有事外出，回家时见强盗所留下的粉笔记号，便停步仔细观察。 - Walking sto school or the shops, walking with a dog or walking with a friend.
走路去学校或许走路去商店，和你的狗或许冤家一同走路。 - Researches on the Uniqueness about Entire Function with Its Derivative and Exact Solutions of STO Equations
整函数及其导函数的唯一性和STO方程精确解的研究 - Is there an obvious color of light that can be seen at night by the Zetas STO?
在夜间“为他人服务”的齐塔人的飞船有明显的光线色彩，并可以被看见吗？ - Mithraism was the reversal of the STO version.
密特拉教是STO版本的反面。 - The experimenter concluded the short sto ages were decoys, to encourage more wasted time and money.
实验者得出结论，短暂的屏蔽是骗局，以鼓励更多的浪自动跳出拨号连接费时间和金钱。 - That sto say the insured cannotexpectto make a profitoutofthe insurance contract.
也就是说，被保险者不能期望从保险合同获利。 - Ok, I have received your message, pls inform me of you remittance, so I can send you the CDs via STO timely.
好的，我已经收到你的信息，汇款后请通知我，我马上用申通快递发货。 - Being that a STO human would want to be of service, how would they, other than emotionally?
作为一个“为他人服务”的人类，除了情感上以外，怎么为别人服务呢？ - How many sto are there to the botanical garden?
去植物园要坐几路车？ - The sulfonated oil SS-1 and STO can increase the fullness and hand of the leather.
磺化油SS-1和STO有良好的填充性，可提高皮革的丰满性和手感。 - The dielectric and interface characteristics of STO with a metal insulator semiconductor ( MIS) structure were investigated.
研究了STO薄膜金属绝缘体半导体（MIS）结构的介电和界面特性。 - STO films were deposited by pulse laser depositing ( PLD).
STO薄膜采用脉冲激光沉积法（PLD）制备。 - According to classic theory of crystalline nucleus formation and growth, crystal dynamics model of STO ferroelectric films was studied. Then, the influences of annealing temperature and its increasing rate on the microstructures of STO films were calculated by this model.
从经典的成核长大理论出发，建立了STO铁电薄膜的晶化动力学模型，根据模型模拟了热处理温度以及升温速率对STO铁电薄膜微结构的影响。 - Comparison between STO cells and hELF used as feeder layers of embryonic germ cells
以STO细胞和hELF作为胚胎生殖细胞培养饲养层的比较 - ( CONCLUSION:) HELF as feeder layers is better than STO cells in culturing EG cells.
结论：在培养人EG细胞时，hELF饲养层较STO细胞饲养层更有优势。 - Crystal dynamics of STO ferroelectric films
STO铁电薄膜晶化动力学研究 - BaTiO_3/ SrTiO_3 ( BTO/ STO) multilayer films have been fabricated on Pt/ Ti/ SiO_2/ Si substrates by a pulsed laser deposition method.
采用脉冲激光沉积法在Pt/Ti/SiO2/Si衬底上制备了BaTiO3/SrTiO3（BTO/STO）多层膜。 - Compared the XRD results of the STO films on MgO and LAO, the films show tensile and compressive stress, respectively.
通过XRD图谱分析，沉积在MgO和LAO基片上的STO薄膜会分别受到张应力和压应力的作用。 - Thin platinum ( Pt) films were prepared on single-crystal substrates MgAl_2O_4 ( 100) ( MAO) and SrTiO_3 ( 100) ( STO) by a facing-target sputtering technique.
用对靶溅射技术在MgAl2O4（100）（MAO）和SrTiO3（100）（STO）单晶基底上制备Pt薄膜。 - These conclusions validated the effect of the STO/ TiO2 double buffer layers preliminarily, and laid the foundation of BFO& GaN integration. 2.
这些结论初步验证了STO/TiO2双缓冲层的作用，为实现BFO与GaN的集成奠定了基础。 - We have successfully prepared BFO/ BTO/ SRO/ STO and BFO/ STO/ SRO/ STO two kinds of multilayer structure epitaxial thin films.
我们成功制备了BFO/BTO/SRO/STO和BFO/STO/SRO/STO两种多层结构外延薄膜。 - It could be realized that the BFO ( 111) thin films epitaxially grown on GaN substrate by inserting the STO/ TiO2 double buffer layers.
而通过插入STO/TiO2双缓冲层，实现了BFO（111）薄膜在GaN基片上的外延生长。 - STO film was deposited on Si ( 100) substrates with V-grooves.
在已经获得表面为V型沟槽的Si（100）衬底上制备STO薄膜。 - Liquid phase deposition and RF magnetron sputtering were adopted to obtain STO film.
采用液相沉淀法（LPD）和射频磁控溅射法制备STO薄膜。 - The BFO/ STO/ TiO2/ AlGaN/ GaN heterostructure was prepared and the effect of ferroelectric performance of the epitaxial BFO thin films on the intrinsic electrical properties of AlGaN/ GaN was explored preliminarily.
制备了BFO/STO/TiO2/AlGaN/GaN异质结构，初步探索了外延生长的BFO薄膜的铁电性对AlGaN/GaN本征电学性能的影响。