ULSI
英
美
abbr. 超大规模集成电路(Ultra Large Scale Integration)
复数：ulsi
双语例句
- Time delay is added in global routing design because its ( considerable) effect on the deep submicron and super deep submicron stage of VLSI and ULSI design.
总体布线在超大规模集成电路的设计中有着举足轻重的作用。 - Preparation and properties of SiCN diffusion barrier film for Cu interconnect in ULSI
SiCN扩散阻挡层薄膜的制备及特性研究 - Analysis and Research on the Surface Roughness of the Copper Multilayer Interconnection CMP in ULSI
ULSI中多层Cu布线CMP表面粗糙度的分析和研究 - Algorithm Research on Measuring the Young's Module for Low-K Film of ULSI Interconnects by Lsaws
LSAWs技术检测ULSI互连布线low-k介质薄膜杨氏模量的算法研究 - The no-blemish copper deposition in micro trench is the essential problem needing to be resolved in the development of ULSI manufacture.
微细凹槽内无空洞和缝隙缺陷镀铜是集成电路芯片铜布线制造工艺技术发展中需解决的一个关键问题。 - Analysis and Study on the Influencing Factors of Copper Interconnection CMP in ULSI
ULSI多层铜布线CMP影响因素分析研究 - The Study on the Delay Time for the Interconnection in ULSI
ULSI中互连线延迟时间的研究 - We present major milestones in the development of MOSFET from inception to ULSI, and discuss future trends of MOSFET performance.
现在，我们评述从MOSFET的起始，直到在ULSI中应用时期的主要里程碑，并且讨论MOSFET功能的未来趋势。 - Technology Analysis on Copper CMP Slurry in ULSI Manufacturing
ULSI制造中铜CMP抛光液的技术分析 - Key Technologies for Copper Interconnections in ULSI
ULSI中铜互连线技术的关键工艺 - In this paper, the problems and research that technology physics faces during the development of ULSI in the technology times of sub-micron are summarized, the development of microelectronics are followed.
文章对深亚微米各技术时代ULSI的发展历程中所遇到的一些材料、技术物理问题以及研究成果进行综述评论，跟踪微电子技术的发展进程。 - The reasons of generating contamination and the measures of protection from contamination in ion implantation are summarized. The protection from metal and particle contamination is emphasized to meet the requirement of ULSI manufacture.
本文概述了离子注入过程中污染产生的原因和防止污染的措施，特别强调了对微粒污染和金属污染的防护以满足ULSI加工对离子注入的要求。 - Dishing problem of copper multilayer interconnection in ULSI was introduced, and the reasons and influencing factors were analyzed.
介绍了ULSI多层铜互连线中的碟形坑问题，对其产生的原因及影响因素进行了分析。 - Chemical-mechanical polishing ( CMP) process is the key important planarization process in ULSI manufacturing. The RBR control applied on the CMP process is introduced in this paper.
本论文介绍了RBR过程控制技术在超大规模集成电路（ULSI）制造中的化学机械抛光（CMP）这一关键工艺中的应用。 - This Paper reviews the recent progress and development trend of photolithography and photoresist for ULSI, including Chemical amplified Resists, Development-free vapor photolithography, Phase shift method and so on.
本文介绍用于超大规模集成电路的光刻技术及其光刻胶，包括化学增值型光刻胶和无显影气相光刻胶等的研究进展和发展趋势。 - The copper chemical-mechanical polishing ( CMP) which is the key planarization technology for ULSI manufacturing was discussed.
对用于甚大规模集成电路（ULSI）制造的关键平坦化工艺&铜化学机械抛光（CMP）技术进行了讨论。 - A Study of the Technology of Ultra-thin Film SOI and the Development of Micro ULSI
超薄膜SOI技术与深亚微米ULSI的发展 - Technology analysis of wafer chemical mechanical polishing in the manufacture of ULSI
超大规模集成电路制造中硅片化学机械抛光技术分析 - Study on fluorinated diamond-like carbon films for ULSI
ULSI用氟化类金刚石薄膜的研究 - Microstructure and Reliability of ULSI Copper Interconnects
ULSI中Cu互连线的显微结构及可靠性 - The application of acid-alkaline combined chemical plating of Cu to ULSI interconnect is studied.
然后研究了酸性和碱性化学镀铜结合方法在铜布线制造方面的应用。 - The Study on the Reliability of the Copper Interconnection in ULSI
ULSI中铜互连线可靠性的研究 - CMP Study of Multilayer Wiring Conductor Copper in ULSI Manufacturing
ULSI制备中多层布线导体铜的抛光液与抛光技术的研究 - Shift from Al to Cu interconnects in Ultra-Large Scale Integrate ( ULSI) is important for semiconductor industry.
利用铜代替铝作为超大规模集成电路的互连接线，代表了半导体工业的重要转变。 - Study on low k fluorinated amorphous carbon films used in ULSI
用于ULSI的低k氟化非晶碳膜研究 - Mechanism of copper interconnection CMP in ULSI was studied.
研究了ULSI多层互连工艺中铜布线的CMP的机理； - Study on Controlling the Concentrations of Dissolved Oxygen and Total Organic Carbon in Water Used for ULSI
控制超大规模集成电路用水中的溶解氧和总有机碳浓度的研究 - Recent progress of multiple-valued logic and fuzzy logic research is analyzed with the focus on the applications of multiple-valued logic and fuzzy logic to soft computing, VLSI and ULSI, universal logic machine, design and test automation of digital systems.
分析了多值逻辑与模糊逻辑研究的最新进展，并着重介绍了多值逻辑与模糊逻辑在软计算、VLSI及ULSI、通用逻辑机及数字系统的设计与测试自动化方面的应用； - Chemical mechanical polishing ( CMP) is the best planarization technology of manufacturing technology of ultra-large-scale integrate circuits ( ULSI).
化学机械抛光（CMP）是超大规模集成电路制造技术（ULSI）中最佳平坦化技术。 - Now, Metal silicide has became more and more important for VLSI/ ULSI device manufacture. It is widely used in source/ drain and gate contact.
金属硅化物在VLSI/ULSI器件技术中起着非常重要的作用，被广泛应用于源漏极和硅栅极与金属之间的接触。