blende

1. First-principle calculations of electronic structure and optical properties of Zinc blende CdTe
   闪锌矿型CdTe电子结构和光学性质的第一性原理
2. With increasing pressure, the wurtzite structre was transformed to zinc blende structure at 11.2 GPa.
   压力达到11.2GPa时，纳米硫化锌空心球中的纤锌矿结构全部转变为闪锌矿结构。
3. Zinc sulfate was produced in process of soaking blende with sulfuric acid of high concentration in oxygen and at normal pressure.
   研究了在常压、通氧条件下，用浓硫酸浸取闪锌矿制取硫酸锌时酸浸条件对锌浸取率的影响。
4. The main mineral composition of the ore is zinc blende and lead glance.
   矿石矿物成份主要为闪锌矿，次为方铅矿。
5. Ores consist of pyrite, blende, aurum, zinckenite, tennantite, antimonite, realgar, and orpiment, belong to typical Low-temperature minerals assemblage.
   矿石由黄铁矿、闪锌矿、自然金、辉锑铅矿、砷黝铜矿、辉锑矿、辉锑银铅矿、雄黄、雌黄等组成，为典型的低温热液矿物组合。
6. The synthesis and characterization of ZnS nanowires with zinc blende structure
   立方闪锌矿结构ZnS纳米线的合成与表征
7. Influence of the chemical bond on the energy bands of the zinc blende structure
   化学键对闪锌矿型晶体能带结构的影响
8. Zinc sulfate heptahydrate was prepared by direct wet chemical method with blende as raw material and ferric sulfate and sulfuric acid solution as way of extraction.
   以闪锌矿为原料，用硫酸和硫酸铁溶液作浸取剂，经直接-全湿化学法制备了七水合硫酸锌。
9. Research on Suspension Electrolysis of High-iron Zinc Blende(ⅱ)
   高铁闪锌矿悬浮电解工艺研究（Ⅱ）
10. This article also discusses the electrical properties of zinc blende structure InN thin films and presents the potential application of InN thin films for devices ( mainly for high electron mobility transistors).
    同时也涉及了部分立方闪锌矿结构InN的电学特性和InN在器件（主要是高电子迁移率晶体管器件）上的潜在应用。
11. Optical Phonon Behavior of Mix-Crystal Zn_ ( 1-x) Mn_xSe with Zinc Blende Structure
    闪锌矿结构Zn（1－x）MnxSe混晶光学声子行为
12. CdSe QDs of zinc blende structure have been synthesized by a simple ethylenediamine-assisted method.
    采用简单的乙二胺辅助方法合成出闪锌矿型结构的CdSeQDs。
13. Study on Technology of Iron Removal From Acid Leaching Liquid of Zinc Blende
    闪锌矿常压酸浸制取硫酸锌除铁工艺研究
14. The self-consistent Linear Muffin Tin Orbital ( LMTO) energy band method is applied to the case of the open structures: Sn ( Diamond) and CdTe ( Zinc blende).
    本文将自洽LMTO能带方法应用到半导体开结构情况，如αSn（金刚石结构）、CdTe（闪锌矿结构）。
15. A mechanism of crystal structure transformation of CdSe QDs has been proposed and the formation of zinc blende structure is discussed.
    提出了CdSeQDs晶体结构转变的机制并对闪锌矿型结构CdSeQDs的形成进行了讨论。
16. It can reduce the total time of floatation and processing circuit quantity, increase lead-zinc metal recovery ratio, achieve saving energy source and enhancing economic benefit by adopting speediness embranchment floatation technics which based on the floatation speed difference of galena and blende in ore.
    根据矿石中方铅矿、闪锌矿上浮速度的差异，采用快速分支浮选工艺，可减少矿物的总浮选时间和作业循环量，提高铅锌金属回收率，达到节能降耗、提高经济效益的目的。
17. XRD results indicated that the products are of cubic zinc blende structure.
    XRD研究表明，产物为立方闪锌矿结构；
18. Studies on Phonon Spectra of Zinc-Blende Structure Semiconductors
    闪锌矿结构半导体声子谱研究
19. Synthesis and Characterization of Monodisperse CdSe Quantum Dots with Zinc Blende Structure
    单分散闪锌矿型CdSe量子点的合成及表征
20. The study indicates that the film belongs to a zinc blende structure.
    分析表明，该薄膜的结构符合闪锌矿的特征。
21. Calculation of Optical Properties of Zinc blende GaN, AlN and Their Alloys Ga 1 x Al x N
    闪锌矿结构GaN、AlN和合金Ga（1-x）AlxN光学性质计算
22. The utilization of low calciferous rock and blende tails for burning cement clinker
    利用低钙石和闪锌尾矿煅烧水泥熟料的研究
23. The possibility of utilizing low calciferous rock and blende tails in the cement industry has been studied.
    研究利用低钙石和闪锌尾矿代替粘土煅烧高质量的水泥熟料。
24. The electronic structures of zinc blende GaN ( 001)( 1 × 1) surface are studied by employing an ab initio 'mixed basis+ norm conserving non local pseudopotential' method.
    采用混合基表示的第一原理赝势方法，计算了闪锌矿结构的GaN（001）（1×1）干净表面的电子结构。
25. Experimental study of sulphur recycling from zinc blende concentrate in oxygen pressure acid leaching slag
    闪锌矿精矿氧压酸浸渣中硫的回收实验研究
26. The obtained results indicate that CdSe with zinc blende structure and wurtzite structure are direct band gap semiconductors; CdSe with rock-salt structure is indirect band gap semiconductor; CdSe with CsCl structure is semimetal.
    结果表明，闪锌矿结构和纤锌矿结构CdSe为直接带隙半导体材料；盐岩结构CdSe为间接带隙半导体材料；CsCl结构CdSe为半金属材料。
27. The energy band, geometry parameters, density of states, and cohesive energy of CdSe with zinc blende structure, wurtzite structure, rock-salt structure, and CsCl structure are calculated, respectively.
    分别计算了闪锌矿结构，纤锌矿结构，岩盐结构和CsCl结构CdSe的能带、几何参数、电子态密度和内聚能。
28. X-ray diffraction ( XRD) and high resolution transmission electron microscopy ( TEM) results show that the two type semiconductor QDs ( SnO2-tetragonal rutile and ZnS-zinc blende) possessed well radius, crystal structure and even particle size.
    X射线衍射（XRD）和高分辨透射电镜表明这种方法制备的四方金红石氧化锡和闪锌矿型硫化锌量子点粒径小且均匀。
29. And 1-D nanorods of CdS had wurtzite phase while others had a zinc blende core and wurtzite arms.
    所得的1-DCdS纳米棒具有纤锌矿相，而其它CdS具有硫化锌核心和纤锌矿臂。
30. GaAs has the structure of zinc blende and is a kind of direct band gap semiconductor.
    GaAs具有闪锌矿结构，是一种直接带隙半导体。

noun

1. an ore that is the chief source of zinc

   Synonym:    zinc blendesphalerite