Modern voltage references are constructed using the energy-band-gap voltage of integrated transistors, buried zener diodes, and junction field-effect transistors. 现代电压基准建立于使用集成晶体管和带状能隙基准、埋齐纳二极管和结场效应晶体管。
Polaron Dynamics and Zener Tunneling in Conjugated Polymers 共轭聚合物中的极化子动力学与齐纳隧穿研究
Zener references contain batteries that keep the unit under power during transport and calibration. 齐纳参考在运输和校准期间要用电池保持上电。
It's just that a buried zener is even better, if you can afford the higher voltage drop. 如果你可以承受更大的电压跌落的话,一个隐藏型的稳压管似乎更好一点。
Zener diodes behave in this way, which makes them useful as voltage regulators. 齐纳击穿二极管就是这种工作方式,在电压稳压方面非常有用。
It is found that in a high electric field electrons can transit from the valence band to the conduction band, which is demonstrated to be Zener tunneling in organic semiconductors. 发现在足够高的电场下,价带中的电子可以穿过带隙进入导带,即有机聚合物中的齐纳隧穿现象。
Creep compliance of fractional viscoelastic models: generalized Zener and Poynting-Thomson models 分数阶黏弹性模型的蠕变柔量:广义Zener和Poynting-Thomson模型
Therefore, the examination of the zener diode voltage drift parameter has the vital significance. 因此,稳压二极管电压漂移参数的检测具有重要的意义。
Research on low voltage zener diode 齐纳(稳压)二极管低压齐纳二极管的研制
Influence of Al content on Zener relaxation in Fe-Al alloys Al含量对Fe-Al合金Zener弛豫的影响
This paper describes the reduce and stability voltage using the Zener Diode in specific CMOS, in order to make the circuit work well and lower power. Thus, it boarded the application of CMOS mixed& circuit. 主要介绍了专用CMOS电路中采用齐纳二极管降低并稳定电压,保证电路的正常工作并降低功耗,拓宽了CMOS混合电路的应用范围。
In the voltage regulator circuit, the zener diode which acts as the voltage datum, along with the temperature change, its regulated voltage value also can have the corresponding change. 在稳压电路中,作为电压基准的稳压二极管,随着温度的变化,其稳定电压值亦会发生相应的变化。
Reasonable selection of Zener barrier for industrial safety control system 本安控制系统中齐纳安全栅的合理选择
This article narrated several kind of plans of examining high accuracy zener diode parameter, emphatically researched the test method of taking high accuracy constant-source as datum current to examine the voltage drift of zener diode. 本文叙述了检测高精度稳压二极管参数的几种方案,重点介绍了以高精度恒流源为基准电流检测稳压二极管电压漂移的测试方法;
Therefore, the people have gone deep into research constantly in this domain in recent years by the time, hope to make the voltage datum zener diode is stabler. 为此,人们近年来在此领域不断的深入,以期制造出更为稳定的电压基准稳压二极管。
The Calculation of Zener Relaxation by Kinetic Method Zener弛豫效应的动力学计算
1/ f Noise as Reliability Prediction for Subsurface Zener Reference Diodes 亚表面齐纳基准二极管可靠性的1/f噪声预测方法
Zener Diode Control Rail to Rail CMOS Operational Amplifier 一种齐纳二极管控制式轨对轨CMOS运算放大器
The present paper deals with the application of Zener to engineering. 本文从工程应用的角度着重讨论了齐纳管某些主要参数;
In the modern electronic circuit instrument and the equipment, took the voltage datum the zener diode, has a more widespread application. 在现代电子线路仪器和设备中,作为电压基准的稳压二极管,有着较广泛的应用。
The electronic transmission coefficient is calculated using the Landau Zener formalism. 利用原始Landau-Zener理论计算了电子发射系数。
Zener Factor for Diffusion Near Dendrite Tip During Constrained Solidification 约束凝固枝晶尖端扩散场的Zener近似因子
And according to the rate process theory in diffusion, the relaxation strength is computed by a kinetic method in the nearest-neighbor interaction approximation. 并按照原子扩散过程中反应率过程理论,在最近邻相互作用近似下,用动力学方法,计算了Zener弛豫效应。
Optically triggered MOS gated solid state relay is a new switching device, which is composed of an MOS gated thyristor, a phototransistor, an enhanced mode MOSFET and a Zener diode. 光控MOS栅固态继电器是由MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳二极管组成的新型开关器件。
Change smaller, meant the voltage of the electric circuit outputs is stabler, this is beneficial for the electric appliance, specially the aviation, spaceflight as well as the precision guidance of missile and so on, have more and more high request to zener diode. 变化越小,意味着电路输出的电压越稳定,这对于电器产品来说是有益的,特别是航空、航天以及导弹的精确制导等,对该管的要求越来越高。
Along with the zener diode PN junction temperature change, its regulated voltage value can have the corresponding drifting. From the use said its change value is smaller, the constant voltage performance is better. 随着稳压管PN结温度的变化,其稳定电压值会发生相应的漂移,从使用上来说其变化值越小稳压性能越好。